Error caching techniques for improved error correction in a memory device

ABSTRACT

Methods, systems, and devices for error caching techniques for improved error correction in a memory device are described. An apparatus, such as a memory device, may use an error cache to store indications of memory cells identified as defective and may augment an error correction procedure using the stored indications. If one or more errors are detected in data read from the memory array, the apparatus may check the error cache, and if a bit of the data is indicated as being associated with a defective cell, the bit may be inverted. After such inversion, the data may be checked for errors again. If the inversion corrects an error, the resulting data may be error-free or may include a reduced quantity of errors that may be correctable using an error correction scheme.

CROSS REFERENCE

The present Application for Patent is a continuation of U.S. patentapplication Ser. No. 16/993,956 by Eilert et al., entitled “ERRORCACHING TECHNIQUES FOR IMPROVED ERROR CORRECTION IN A MEMORY DEVICE,”filed Aug. 14, 2020, assigned to the assignee hereof, and is expresslyincorporated by reference in its entirety herein.

BACKGROUND

The following relates generally to one or more systems for memory andmore specifically to error caching techniques for improved errorcorrection in a memory device.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprograming memory cells within a memory device to various states. Forexample, binary memory cells may be programmed to one of two supportedstates, often denoted by a logic 1 or a logic 0. In some examples, asingle memory cell may support more than two states, any one of whichmay be stored. To access the stored information, a component may read,or sense, at least one stored state in the memory device. To storeinformation, a component may write, or program, the state in the memorydevice.

Various types of memory devices and memory cells exist, includingmagnetic hard disks, random access memory (RAM), read-only memory (ROM),dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), ferroelectric RAM(FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phasechange memory (PCM), self-selecting memory, chalcogenide memorytechnologies, and others. Memory cells may be volatile or non-volatile.Non-volatile memory, e.g., FeRAM, may maintain their stored logic statefor extended periods of time even in the absence of an external powersource. Volatile memory devices, e.g., DRAM, may lose their stored statewhen disconnected from an external power source.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of a system that supports error cachingtechniques for improved error correction in a memory device inaccordance with examples as disclosed herein.

FIG. 2 illustrates an example of a memory die that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein.

FIG. 3 illustrates an example of a system that supports error cachingtechniques for improved error correction in a memory device inaccordance with examples as disclosed herein.

FIG. 4 illustrates an example of a process flow that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein.

FIG. 5 shows a block diagram of a memory device that supports errorcaching techniques for improved error correction in a memory device inaccordance with aspects of the present disclosure.

FIGS. 6 and 7 show flowcharts illustrating a method or methods thatsupport error caching techniques for improved error correction in amemory device in accordance with examples as disclosed herein.

DETAILED DESCRIPTION

Some memory systems may utilize error detection or correctiontechniques, which may generally be referred to as error checkingtechniques, to detect or correct errors in data retrieved from a memoryarray. For example, error checking techniques may determine whether datawas corrupted while stored in a memory array, and in some cases mayattempt to correct detected errors. However, error checking techniquesmay be limited to detecting or correcting up to a certain quantity oferrors (e.g., a single error correction (SEC) scheme may be able todetect and correct a single error in a set of data, a SEC double errordetection (DED) scheme may be able to detect up to two errors andcorrect one error in a set of data, among other examples of errorchecking techniques). In some cases, data may include errors above thequantity of correctable or detectable errors for an error checkingscheme (e.g., a SECDED scheme may be unable to detect or correct threeerrors in a set of data, among other examples of quantities andschemes).

The techniques described herein may utilize an error cache for errorcorrection, which may result in relatively more robust error checkingtechniques, among other advantages. The error cache may include entriesindicating locations of one or more defective memory cells of the memoryarray, and the memory device may perform one or more procedures forerror correction using the error cache. For example, upon reading datafrom a memory array, the memory device may detect a quantity of errorsin the data that the memory device is unable to correct using onlyparity information for the data (e.g., the memory device using a SECDEDerror checking scheme may detect two errors in the data, among otherexamples). In such examples, the memory device may determine whether theerror cache includes an entry for the address of the data. If the errorcache includes the entry, the memory device may select one or more bitsof the data to invert based on the entry. For example, the memory devicemay identify that a bit of the data is associated with a defectivememory cell based on an address associated with the data and acorresponding entry in the error cache. The memory device may invert thebit corresponding to the defective memory cell to obtain altered data.After such inversion, the memory device may then apply the errorchecking scheme to the altered data, which may enable the memory deviceto correct the data based on the associated parity information (e.g., ifinverting the bit corrects one of the two detected errors, thus leavingonly a single error, the memory device may be able to correct theremaining error using the SECDED scheme and output the corrected data).

Some errors associated with a memory array may be fixed (e.g., due to amemory cell being defective, such as being “stuck” storing a certainlogic state), while other errors may be time-variant (e.g., due totransient conditions such as temperature or electromagnetic effects,such that an associated memory cell may not in fact be defective). Thecache may be managed (e.g., populated and culled or otherwise have itsentries maintained) so as to include indications of memory cellsassociated with fixed errors and cull or otherwise not includeindications of memory cells associated with time-variant errors. Forexample, the error cache may include an indication of a defective memorycell for an address, but the memory device may determine there are noerrors in one or more sets of data read from the address. In some suchexamples, the memory device may remove the indication from the cache,which may result in relatively efficient cache utilization and cullentries associated with time-variant errors, among other advantages.

Features of the disclosure are initially described in the context ofsystems and dies as described with reference to FIGS. 1 and 2 . Featuresof the disclosure are described in the context of memory systems andprocess flows as described with reference to FIGS. 3 and 4 . These andother features of the disclosure are further illustrated by anddescribed with reference to an apparatus diagram and flowcharts thatrelate to error caching techniques for improved error correction in amemory device as described with reference to FIGS. 5-7 .

FIG. 1 illustrates an example of a system 100 that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein. The system 100 may includea host device 105, a memory device 110, and a plurality of channels 115coupling the host device 105 with the memory device 110. The system 100may include one or more memory devices 110, but aspects of the one ormore memory devices 110 may be described in the context of a singlememory device (e.g., memory device 110).

The system 100 may include portions of an electronic device, such as acomputing device, a mobile computing device, a wireless device, agraphics processing device, a vehicle, or other systems. For example,the system 100 may illustrate aspects of a computer, a laptop computer,a tablet computer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, or the like. The memorydevice 110 may be a component of the system operable to store data forone or more other components of the system 100.

At least portions of the system 100 may be examples of the host device105. The host device 105 may be an example of a processor or othercircuitry within a device that uses memory to execute processes, such aswithin a computing device, a mobile computing device, a wireless device,a graphics processing device, a computer, a laptop computer, a tabletcomputer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, a system on a chip(SoC), a graphics processing unit (GPU), or some other stationary orportable electronic device, among other examples. In some examples, thehost device 105 may refer to the hardware, firmware, software, or acombination thereof that implements the functions of an external memorycontroller 120. In some examples, the external memory controller 120 maybe referred to as a host or a host device 105.

A memory device 110 may be an independent device or a component that isoperable to provide physical memory addresses/space that may be used orreferenced by the system 100. In some examples, a memory device 110 maybe configurable to work with one or more different types of hostdevices. Signaling between the host device 105 and the memory device 110may be operable to support one or more of: modulation schemes tomodulate the signals, various pin configurations for communicating thesignals, various form factors for physical packaging of the host device105 and the memory device 110, clock signaling and synchronizationbetween the host device 105 and the memory device 110, timingconventions, or other factors.

The memory device 110 may be operable to store data for the componentsof the host device 105. In some examples, the memory device 110 may actas a slave-type device to the host device 105 (e.g., responding to andexecuting commands provided by the host device 105 through the externalmemory controller 120). Such commands may include one or more of a writecommand for a write operation, a read command for a read operation, arefresh command for a refresh operation, or other commands.

The host device 105 may include one or more of an external memorycontroller 120, a processor 125, a basic input/output system (BIOS)component 130, or other components such as one or more peripheralcomponents or one or more input/output controllers. The components ofhost device may be in coupled with one another using a bus 135.

The processor 125 may be operable to provide control or otherfunctionality for at least portions of the system 100 or at leastportions of the host device 105. The processor 125 may be ageneral-purpose processor, a digital signal processor (DSP), anapplication-specific integrated circuit (ASIC), a field-programmablegate array (FPGA) or other programmable logic device, discrete gate ortransistor logic, discrete hardware components, or a combination ofthese components. In such examples, the processor 125 may be an exampleof a central processing unit (CPU), a graphics processing unit (GPU), ageneral purpose GPU (GPGPU), or an SoC, among other examples. In someexamples, the external memory controller 120 may be implemented by or bea part of the processor 125.

The BIOS component 130 may be a software component that includes a BIOSoperated as firmware, which may initialize and run various hardwarecomponents of the system 100 or the host device 105. The BIOS component130 may also manage data flow between the processor 125 and the variouscomponents of the system 100 or the host device 105. The BIOS component130 may include a program or software stored in one or more of read-onlymemory (ROM), flash memory, or other non-volatile memory.

The memory device 110 may include a device memory controller 155 and oneor more memory dies 160 (e.g., memory chips) to support a desiredcapacity or a specified capacity for data storage. Each memory die 160may include a local memory controller 165 (e.g., local memory controller165-a, local memory controller 165-b, local memory controller 165-N) anda memory array 170 (e.g., memory array 170-a, memory array 170-b, memoryarray 170-N). A memory array 170 may be a collection (e.g., one or moregrids, one or more banks, one or more tiles, one or more sections) ofmemory cells, with each memory cell being operable to store at least onebit of data. A memory device 110 including two or more memory dies maybe referred to as a multi-die memory or a multi-die package or amulti-chip memory or a multi-chip package.

The device memory controller 155 may include circuits, logic, orcomponents operable to control operation of the memory device 110. Thedevice memory controller 155 may include the hardware, the firmware, orthe instructions that enable the memory device 110 to perform variousoperations and may be operable to receive, transmit, or executecommands, data, or control information related to the components of thememory device 110. The device memory controller 155 may be operable tocommunicate with one or more of the external memory controller 120, theone or more memory dies 160, or the processor 125. In some examples, thedevice memory controller 155 may control operation of the memory device110 described herein in conjunction with the local memory controller 165of the memory die 160.

In some examples, the memory device 110 may receive data or commands orboth from the host device 105. For example, the memory device 110 mayreceive a write command indicating that the memory device 110 is tostore data for the host device 105 or a read command indicating that thememory device 110 is to provide data stored in a memory die 160 to thehost device 105.

A local memory controller 165 (e.g., local to a memory die 160) mayinclude circuits, logic, or components operable to control operation ofthe memory die 160. In some examples, a local memory controller 165 maybe operable to communicate (e.g., receive or transmit data or commandsor both) with the device memory controller 155. In some examples, amemory device 110 may not include a device memory controller 155, and alocal memory controller 165, or the external memory controller 120 mayperform various functions described herein. As such, a local memorycontroller 165 may be operable to communicate with the device memorycontroller 155, with other local memory controllers 165, or directlywith the external memory controller 120, or the processor 125, or acombination thereof. Examples of components that may be included in thedevice memory controller 155 or the local memory controllers 165 or bothmay include receivers for receiving signals (e.g., from the externalmemory controller 120), transmitters for transmitting signals (e.g., tothe external memory controller 120), decoders for decoding ordemodulating received signals, encoders for encoding or modulatingsignals to be transmitted, or various other circuits or controllersoperable for supporting described operations of the device memorycontroller 155 or local memory controller 165 or both.

The external memory controller 120 may be operable to enablecommunication of one or more of information, data, or commands betweencomponents of the system 100 or the host device 105 (e.g., the processor125) and the memory device 110. The external memory controller 120 mayconvert or translate communications exchanged between the components ofthe host device 105 and the memory device 110. In some examples, theexternal memory controller 120 or other component of the system 100 orthe host device 105, or its functions described herein, may beimplemented by the processor 125. For example, the external memorycontroller 120 may be hardware, firmware, or software, or somecombination thereof implemented by the processor 125 or other componentof the system 100 or the host device 105. Although the external memorycontroller 120 is depicted as being external to the memory device 110,in some examples, the external memory controller 120, or its functionsdescribed herein, may be implemented by one or more components of amemory device 110 (e.g., a device memory controller 155, a local memorycontroller 165) or vice versa.

The components of the host device 105 may exchange information with thememory device 110 using one or more channels 115. The channels 115 maybe operable to support communications between the external memorycontroller 120 and the memory device 110. Each channel 115 may beexamples of transmission mediums that carry information between the hostdevice 105 and the memory device. Each channel 115 may include one ormore signal paths or transmission mediums (e.g., conductors) betweenterminals associated with the components of system 100. A signal pathmay be an example of a conductive path operable to carry a signal. Forexample, a channel 115 may include a first terminal including one ormore pins or pads at the host device 105 and one or more pins or pads atthe memory device 110. A pin may be an example of a conductive input oroutput point of a device of the system 100, and a pin may be operable toact as part of a channel.

Channels 115 (and associated signal paths and terminals) may bededicated to communicating one or more types of information. Forexample, the channels 115 may include one or more command and address(CA) channels 186, one or more clock signal (CK) channels 188, one ormore data (DQ) channels 190, one or more other channels 192, or acombination thereof. In some examples, signaling may be communicatedover the channels 115 using single data rate (SDR) signaling or doubledata rate (DDR) signaling. In SDR signaling, one modulation symbol(e.g., signal level) of a signal may be registered for each clock cycle(e.g., on a rising or falling edge of a clock signal). In DDR signaling,two modulation symbols (e.g., signal levels) of a signal may beregistered for each clock cycle (e.g., on both a rising edge and afalling edge of a clock signal).

In some examples, bit errors may occur due to memory cell defects (e.g.,from manufacturing flows, latent defects that occur after manufacturing,etc.). For example, a memory cell may include a defect resulting in afixed error (e.g., a memory cell may be defective), or a detected errorin a memory cell may be a time-variant error (e.g., a relativelyfunctional memory cell may include an error relatively infrequently dueto operating conditions or other random error occurrences).

An error checking technique may be able to detect or correct up to acertain quantity of errors in data written to and subsequently read froma memory array based on parity information generated for the data, whichin some cases may also be stored in the memory array (e.g., inassociation with the corresponding data). For example, an SEC parityscheme may support detecting or correcting a single error in data basedon the parity information for the data, a SECDED parity scheme maysupport detecting up to two errors and correcting a single error basedon the parity information for the data, among other examples of errordetection schemes). In some cases, data may include errors above thequantity of errors that may be corrected based on the associated parityinformation.

As described herein, a system 100 may implement an error cache for errorcorrection, which may result in relatively more robust error checkingtechniques (e.g., an increase in the quantity of correctable errorsrelative to the quantity correctable based on parity information alone),among other advantages. For example, one or more components of thesystem 100 (e.g., a memory device 110, a host device 105, a devicememory controller 155, a local memory controller 165, an external memorycontroller 120, or any combination thereof) may maintain an error cachein order to provide information for error correction to an errorcorrection engine, as described with reference to FIG. 3 .

The memory device 110 may perform one or more procedures for errorcorrection using the error cache. For example, the memory device 110 maydetect a quantity of errors in data read from a memory array but may beunable to correct the errors using parity information for the data(e.g., the memory device 110 may detect two errors in a SECDED scheme,among other examples). In such examples, the memory device 110 maydetermine whether the error cache includes an entry for the address ofthe data. If the error cache includes the entry, the memory device 110may select one or more bits of the data to invert based on the entry.For example, the memory device 110 may identify a location of adefective memory cell within the address based on an indication writtento the entry. The memory device 110 may invert the bit corresponding tothe defective memory cell to obtain altered data. The memory device 110may then be able to correct the altered data using the parityinformation for the data (e.g., if inverting the bit changes the twopreviously detected errors to a single error in a SECDED scheme, thememory device may be able to correct the error and output the correcteddata). Thus, by keeping track of known error locations (e.g., defectivememory cells) using the error cache, the error correction capability ofan error correction scheme may be enhanced.

In some examples, the memory device 110 may update the error cache. Forexample, if the memory device 110 identifies data as error-free when theerror cache includes an indication of a defective memory cell associatedwith the data, the memory device 110 may in some circumstances removethe indication from the cache, which may result in relatively efficientcache utilization and over time focus the cache entries on fixed errors,among other advantages.

FIG. 2 illustrates an example of a memory die 200 that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein. The memory die 200 may bean example of the memory dies 160 described with reference to FIG. 1 .In some examples, the memory die 200 may be referred to as a memorychip, a memory device, or an electronic memory apparatus. The memory die200 may include one or more memory cells 205 that may each beprogrammable to store different logic states (e.g., programmed to one ofa set of two or more possible states). For example, a memory cell 205may be operable to store one bit of information at a time (e.g., a logic0 or a logic 1). In some examples, a memory cell 205 (e.g., amulti-level memory cell) may be operable to store more than one bit ofinformation at a time (e.g., a logic 00, logic 01, logic 10, a logic11). In some examples, the memory cells 205 may be arranged in an array,such as a memory array 170 described with reference to FIG. 1 .

A memory cell 205 may store a charge representative of the programmablestates in a capacitor. DRAM architectures may include a capacitor thatincludes a dielectric material to store a charge representative of theprogrammable state. In other memory architectures, other storage devicesand components are possible. For example, nonlinear dielectric materialsmay be employed. The memory cell 205 may include a logic storagecomponent, such as capacitor 230, and a switching component 235. Thecapacitor 230 may be an example of a dielectric capacitor or aferroelectric capacitor. A node of the capacitor 230 may be coupled witha voltage source 240, which may be the cell plate reference voltage,such as Vpl, or may be ground, such as Vss.

The memory die 200 may include one or more access lines (e.g., one ormore word lines 210 and one or more digit lines 215) arranged in apattern, such as a grid-like pattern. An access line may be a conductiveline coupled with a memory cell 205 and may be used to perform accessoperations on the memory cell 205. In some examples, word lines 210 maybe referred to as row lines. In some examples, digit lines 215 may bereferred to as column lines or bit lines. References to access lines,row lines, column lines, word lines, digit lines, or bit lines, or theiranalogues, are interchangeable without loss of understanding oroperation. Memory cells 205 may be positioned at intersections of theword lines 210 and the digit lines 215.

Operations such as reading and writing may be performed on the memorycells 205 by activating or selecting access lines such as one or more ofa word line 210 or a digit line 215. By biasing a word line 210 and adigit line 215 (e.g., applying a voltage to the word line 210 or thedigit line 215), a single memory cell 205 may be accessed at theirintersection. The intersection of a word line 210 and a digit line 215in either a two-dimensional or three-dimensional configuration may bereferred to as an address of a memory cell 205.

Accessing the memory cells 205 may be controlled through a row decoder220 or a column decoder 225. For example, a row decoder 220 may receivea row address from the local memory controller 260 and activate a wordline 210 based on the received row address. A column decoder 225 mayreceive a column address from the local memory controller 260 and mayactivate a digit line 215 based on the received column address.

Selecting or deselecting the memory cell 205 may be accomplished byactivating or deactivating the switching component 235 using a word line210. The capacitor 230 may be coupled with the digit line 215 using theswitching component 235. For example, the capacitor 230 may be isolatedfrom digit line 215 when the switching component 235 is deactivated, andthe capacitor 230 may be coupled with digit line 215 when the switchingcomponent 235 is activated.

The sense component 245 may be operable to detect a state (e.g., acharge) stored on the capacitor 230 of the memory cell 205 and determinea logic state of the memory cell 205 based on the stored state. Thesense component 245 may include one or more sense amplifiers to amplifyor otherwise convert a signal resulting from accessing the memory cell205. The sense component 245 may compare a signal detected from thememory cell 205 to a reference 250 (e.g., a reference voltage). Thedetected logic state of the memory cell 205 may be provided as an outputof the sense component 245 (e.g., to an input/output 255), and mayindicate the detected logic state to another component of a memorydevice that includes the memory die 200.

The local memory controller 260 may control the accessing of memorycells 205 through the various components (e.g., row decoder 220, columndecoder 225, sense component 245). The local memory controller 260 maybe an example of the local memory controller 165 described withreference to FIG. 1 . In some examples, one or more of the row decoder220, column decoder 225, and sense component 245 may be co-located withthe local memory controller 260. The local memory controller 260 may beoperable to receive one or more of commands or data from one or moredifferent memory controllers (e.g., an external memory controller 120associated with a host device 105, another controller associated withthe memory die 200), translate the commands or the data (or both) intoinformation that can be used by the memory die 200, perform one or moreoperations on the memory die 200, and communicate data from the memorydie 200 to a host device 105 based on performing the one or moreoperations. The local memory controller 260 may generate row signals andcolumn address signals to activate the target word line 210 and thetarget digit line 215. The local memory controller 260 may also generateand control various voltages or currents used during the operation ofthe memory die 200. In general, the amplitude, the shape, or theduration of an applied voltage or current discussed herein may be variedand may be different for the various operations discussed in operatingthe memory die 200.

The local memory controller 260 may be operable to perform one or moreaccess operations on one or more memory cells 205 of the memory die 200.Examples of access operations may include a write operation, a readoperation, a refresh operation, a precharge operation, or an activateoperation, among others. In some examples, access operations may beperformed by or otherwise coordinated by the local memory controller 260in response to various access commands (e.g., from a host device 105).The local memory controller 260 may be operable to perform other accessoperations not listed here or other operations related to the operatingof the memory die 200 that are not directly related to accessing thememory cells 205.

The local memory controller 260 may be operable to perform a writeoperation (e.g., a programming operation) on one or more memory cells205 of the memory die 200. During a write operation, a memory cell 205of the memory die 200 may be programmed to store a desired logic state.The local memory controller 260 may identify a target memory cell 205 onwhich to perform the write operation. The local memory controller 260may identify a target word line 210 and a target digit line 215 coupledwith the target memory cell 205 (e.g., the address of the target memorycell 205). The local memory controller 260 may activate the target wordline 210 and the target digit line 215 (e.g., applying a voltage to theword line 210 or digit line 215) to access the target memory cell 205.The local memory controller 260 may apply a specific signal (e.g., writepulse) to the digit line 215 during the write operation to store aspecific state (e.g., charge) in the capacitor 230 of the memory cell205. The pulse used as part of the write operation may include one ormore voltage levels over a duration.

The local memory controller 260 may be operable to perform a readoperation (e.g., a sense operation) on one or more memory cells 205 ofthe memory die 200. During a read operation, the logic state stored in amemory cell 205 of the memory die 200 may be determined. The localmemory controller 260 may identify a target memory cell 205 on which toperform the read operation. The local memory controller 260 may identifya target word line 210 and a target digit line 215 coupled with thetarget memory cell 205 (e.g., the address of the target memory cell205). The local memory controller 260 may activate the target word line210 and the target digit line 215 (e.g., applying a voltage to the wordline 210 or digit line 215) to access the target memory cell 205. Thetarget memory cell 205 may transfer a signal to the sense component 245in response to biasing the access lines. The sense component 245 mayamplify the signal. The local memory controller 260 may activate thesense component 245 (e.g., latch the sense component) and therebycompare the signal received from the memory cell 205 to the reference250. Based on that comparison, the sense component 245 may determine alogic state that is stored on the memory cell 205.

The local memory controller 260 and the memory die 200 may implement anerror cache 265 to support error correction for data stored in and readfrom the memory array. The error cache 265 may be coupled with the localmemory controller 260 as shown in FIG. 2 . Alternatively, in some casesthe error cache 265 may be coupled with the local memory controller 260.And in some cases (e.g., where memory cells 205 are non-volatile), theerror cache 265 may be or include a portion of the memory array.

The local memory controller 260 (or another controller of the memorydevice 110 or a host device 105) may maintain (e.g., manage) thecontents of the error cache 265 in order to provide information forerror correction, as described with reference to FIG. 3 , for example.The error cache 265 may be populated with one or more entries indicatinglocations of one or more defective memory cells of the memory die 200.For example, the local memory controller 260 may identify an error indata associated with an address, and the local memory controller 260 maywrite the location of the identified the error cache 265 based at leastin part on identifying the error. For example, the local memorycontroller 260 may store an address (e.g., a physical address) for oneor more memory cells from which the data was read, possibly along withan offset parameter indicating the location of a memory cell within aset of memory cells associated with the address, where the memory cellis associate with the detected error.

The local memory controller 260 may perform one or more procedures forerror correction using information stored in the error cache 265. Forexample, error checking logic (e.g., within the memory die 200) maydetect a quantity of errors in data read from the memory array but maybe unable to correct the errors using parity information for the data(e.g., the local memory controller 260 may detect two errors in a SECDEDscheme, among other examples). The error checking logic may be orinclude an error correction engine 315 as described with reference toFIG. 3 . In such examples, the local memory controller 260 may determinewhether the error cache 265 includes an entry for an address associatedwith the data. If the error cache 265 includes such an entry, the localmemory controller 260 may select one or more bits of the data to invertbased on the entry. For example, the local memory controller 260 mayidentify a location of a defective memory cell based on an indicationwritten to the entry. The local memory controller 260 may invert a bitcorresponding to the defective memory cell to obtain altered data. Thelocal memory controller 260 may input the altered data into the errorchecking logic, which may then be able to correct the data based on theassociated parity information (e.g., if inverting the bit changes thetwo detected errors to a single error in a SECDED scheme, the memorydevice may be enabled to correct the error and output the correcteddata).

In some examples, the local memory controller 260 may update the errorcache 265. For example, the local memory controller 260 may fail toidentify errors in data associated with an address, where the errorcache 265 includes an indication of a defective memory cell for theaddress. In at least some such circumstances, the local memorycontroller 260 may remove the indication from the error cache 265, whichmay result in relatively efficient cache utilization, among otheradvantages.

FIG. 3 illustrates an example of a system 300 that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein. The system 300 may be anexample of aspects of a system 100 or a memory device 110 as describedwith reference to FIGS. 1 and 2 , respectively.

The system 300 may include a memory array 310, which may be an exampleof a memory array 170. The system 300 may also include error cache 305and error correction engine 315. The system 300 may be configured toperform one or more error checking procedures using the error correctionengine 315 and the error cache 305, which may reduce the chance oferrors in communications (e.g., transmitting corrupted data from thememory array 310). Generally, the components shown in FIG. 3 mayimplement the procedures and operations described herein related toerror checking, although it is to be understood that there may be moreor less components than shown that implement the procedures.Additionally or alternatively, although illustrated as separate forillustrative clarity, the various components described herein may becombined or physically located differently than illustrated.

The error cache 305 may maintain a list of memory cells associated withpreviously detected errors (e.g., defective memory cells). For example,the system 300 may keep track of a list of known “stuck-at” bits (e.g.,memory cells that store a same logic state regardless of which logicstate was written to the memory cells). In some examples, the list maybe generated based on error correction code results or from testing doneduring one or more maintenance cycles, such as refresh cycles (e.g., thesystem 300 may perform a diagnostic procedure for the memory deviceduring a refresh or other opportune period and the error cache 305 maybe populated based on the results of the procedure). In some examples,information may be loaded to the error cache 305 upon powerup (e.g., inNVM, the list may be loaded to content addressable memory (CAM) orstatic RAM on powerup of the memory device).

The system 300 may receive a command, for example, from a host device.The command may indicate an address 320 associated with data (e.g., alogical address associated with the data or a physical addressassociated with a set of memory cells within the memory array 310 forwriting or reading the data).

When a received command is a write command, the system 300 may store thedata in the memory array 310. In some cases, the system 300 may alsocheck the error cache 305, and if the error cache 305 includes one ormore entries for the address 320 (e.g., an entry indicating a state inwhich a memory cell is “stuck”), the system 300 may write data to thememory array 310 such that a bit stored to the stuck memory cell alignswith the stuck state of the memory cell (e.g., if a memory cell is stuckat a logic state of “1,” the system 300 may write the data such that abit with a value of “1” is stored at the indicated location of the stuckmemory cell), among other examples. For example, the system 300 mayinvert the data and also store any associated inversion flag in thememory array 310 or the error cache 305.

When a received command is a read command, a controller of the system300 may perform a read operation to retrieve corresponding data 340 fromthe indicated address 320 of the memory array 310. In some examples, thesystem 300 may also read parity information for the data 340 (e.g.,parity bits 355 previously generated based on the data 340) from thememory array 310. Additionally or alternatively, the system 300 may readsome or all of the parity bits 355 from the error cache 305.

The system 300 may perform error checking using the error correctionengine 315 (e.g., based on a parity scheme associated with the errorcorrection engine, such an SEC parity scheme or a SECDED parity scheme).For example, in response to a read command for the data 340, the errorcorrection engine 315 may receive the data 340 and the parity bits 355associated with the data 340. The error correction engine 315 mayperform a procedure to detect or correct errors in the data 340 in usingthe parity bits 355.

In some cases, the error correction engine may fail to identify errorsin the data 340. For example, the data 340 may be free of errors or aquantity of errors may exceed a detection capability of the errorcorrection scheme (e.g., three or more errors in a SECDED scheme mayresult in valid codewords, and the error correction engine 315 may failto identify errors in the data 340). In some other cases, the errorcorrection engine 315 may identify a correctable quantity of one or moreerrors in the data 340 and may correct the one or more errors to obtaincorresponding corrected data 345. For example, the error correctionengine 315 may identify a single error in a SEC or SECDED scheme and maycorrect the single error (e.g., flip a bit from a first logic state to acorrect second logic state, the flipped bit identified using the paritybits 355) before outputting the corrected data 345, for example, to ahost device requesting the data.

In some cases, the error correction engine 315 may compare a quantity ofdetected errors to a threshold and determine whether the threshold issatisfied. If the threshold is satisfied, the error correction engine315 may be unable to correct the detected errors (e.g., the errorcorrection engine 315 may detect two errors in a SECDED error correctionscheme, but may be unable to correct the two errors). The threshold maybe any quantity (e.g., 1 or greater). Based on the threshold beingsatisfied, the system 300 may query the error cache 305 to determinewhether the error cache 305 includes an entry for the address 320.

In response to the query, the error cache 305 may send information 350to the error correction engine 315. The information 350 may includeerror correction information which may enable the error correctionengine 315 to correct the quantity of errors. As an illustrativeexample, the information 350 stored in the error cache 305 may includean indication of the address 320, an indication of a location of one ormore defective memory cells of the set of memory cells associated withthe address 320 in the memory array 310 (e.g., an offset parameterindicating a position of a defective memory cell within the address320), an error count for the defective memory cell, metadata associatedwith the memory cell, or any combination thereof.

The system 300 may identify one or more defective memory cells based onthe information 350 (e.g., the information 350 may indicate the locationof one or more defective memory cells in the address 320 storing thedata 340). The system 300 may change a value of one or more bitsassociated with the one or more defective memory cells. For example, theerror correction engine 315 may invert a value of a bit associated witha defective memory cell (e.g., from 0 to 1 or from 1 to 0) to obtainaltered data (e.g., the data 340 with the one or more bits read from theone or more defective memory cells being inverted). The altered data maybe input to the error correction engine 315 (or alternatively a seconderror correction engine, possibly based on a different parity scheme)for a second error checking procedure. By changing (e.g., inverting) thebits associated with the one or more defective memory cells inaccordance with the indications stored in the error cache 305, the errorcorrection engine 315 may be enabled to correct the errors in the data340 based on correcting a reduced quantity of errors int ehcorresponding altered data. As an illustrative example, if the errorcorrection engine 315 detects two errors in a SECDED scheme, one or bothof the errors may be corrected by inverting one or both bits associatedwith the defective memory cell indications stored in the error cache 305(e.g., a single error may be corrected by the bit inversion, and theerror correction engine 315 may use the parity bits 355 to identify andcorrect the remaining error). The error correction engine 315 may outputthe corrected data 345 after correcting one or more errors in thealtered data or determining that the altered data is error free.

The system 300 may maintain the error cache 305. For example, the system300 may employ methods for testing cached error locations andcontinuously updating (e.g., adding or culling) the list of “bad”locations (e.g., defective memory cells), which may increase theefficiency of the error cache 305. The error correction engine 315 maydetermine one or more results of one or more error correction ordetection procedures. The error correction engine 315 may sendinformation 335 indicating the one or more results. In one illustrativeexample, the error correction engine 315 may fail to identify errors inthe data 340. If the error cache 305 includes an entry for the address320 (e.g., an indication of a defective memory cell in a set of memorycells associated with the address 320), the information 335 may indicateto remove the entry based on failing to identify an error. Such removalmay result in more efficient cache utilization and remove entries of theerror cache 305 that may not be a result of a fixed error (e.g., theindication of the defective memory cell may be stored previously basedon identifying a time-variant error), which may reduce the chance ofincorrectly inverting bits for subsequent error procedures.

In some examples, the system 300 may remove an indication from the errorcache 305 based on one or more thresholds. For example, the system 300may increment a counter or otherwise track a quantity of times (e.g.,consecutive times) that no errors are detected for a memory cellindicated by the error cache 305 as defective. If the quantity of timesthat no errors are detected satisfies a threshold, the system 300 mayremove the entry of the error cache corresponding to the memory cell. Byupdating the error cache 305 based on satisfying the threshold, thesystem 300 may cull entries of the error cache that may be associatedwith a time-variant error while avoiding culling entries based oncoincidental error-free determinations (e.g., if a defective memory cellhappens to be stuck in a state corresponding to a logic value written tothe memory cell).

As another illustrative example, the error correction engine 315 mayidentify an error in the data 340 that is associated with a specificmemory cell. If the error cache 305 lacks an entry for the address 320,the information 335 may indicate to write an entry in the error cache305 for the address 320, or an indication that the specific memory cellis defective if an entry for the address 320 exists but lacks anindication for the specific memory cell. In some cases, if the errorcache 305 already includes an entry for the address 320, the information335 may indicate to increment an error count associated with the memorycell based on identifying the memory cell as associated with the error.Writing, to the error cache 305, an indication that the specific memorycell is defective (e.g., so as to determine bit inversion in response tosubsequent reads from the memory cell) may be based on the incrementederror count satisfying a threshold. By tracking error counts for memorycells using the error cache 305 and generating an indication that thememory cell is defective based on the error count for the memory cellsatisfying a threshold, the system 300 may reduce a chance of adding amemory cell with a time-variant error to the error cache 305 (e.g., thethreshold may help ensure that the error cache 305 includes memory cellswith fixed defects, among other examples).

FIG. 4 illustrates an example of a process flow 400 that supports errorcaching techniques for improved error correction in a memory device inaccordance with examples as disclosed herein. The process flow may be anexample of operations performed by a system 100, a memory device 110, ora system 300 as described with reference to FIGS. 1-3 , respectively.Generally, the operations shown in FIG. 4 may illustrate procedures andoperations of a memory device (or a memory system) to perform errorcorrection procedures using an error cache, although it is to beunderstood that there may be more or less operations than shown.Additionally or alternatively, operations may be added, removed, orperformed in a different order than shown in FIG. 4 .

At 405, the memory device may receive a command. For example, the memorydevice may receive a read command from a host device. The command mayindicate an address (e.g., a logical or physical address) for data thatis to be read from a memory array within the memory device.

The memory device may apply the address (e.g., as received or based on alogical-to-physical mapping to obtain a physical address) to a memoryarray and an error cache of the memory device (e.g., a memory array 310and an error cache 305 as described with reference to FIG. 3 ). Forexample, if the command received at 405 is a read command, at 410 thememory device may read data from the memory array based on the addressindicated by the command. In some examples, the memory device may alsoread parity bits associated with the data from the memory array. Thememory device may also use the address to search the error cache for anentry associated with the address (e.g., the memory device may determinewhether the cache includes an entry for the indicated address or for anaddress mapped to the indicated address). For example, the memory devicemay query the error cache concurrent (e.g., in parallel) with readingthe data and performing a first error checking procedure for the datausing the parity bits. That is, a time period to search the error cacheand provide any cached information for the address (e.g., apply a queryto the error cache and return a result to an error correction engine)may be allocated such that the cached information is available to theerror correction engine before completion of the first error checkingprocedure for the raw data.

At 415, the memory device may determine whether any errors are detectedin the data. For example, the memory device may input the data andassociated parity bits into the error correction engine as part of afirst procedure. The memory device may use the parity bits to determinewhether there are one or more errors in the data.

In some examples, the memory device may detect no errors in the data.For example, the data may be free of errors or a quantity of errors mayexceed a detection capability of the parity scheme associated with theparity bits (e.g., a SECDED scheme may fail to identify three or moreerrors in the data). At 425, based on the result of the error checkingprocedure indicating that the data is free of errors, the memory devicemay output the data. In some examples, the memory device may perform oneor more operations for the error cache based on failing to detect errorsin the data. For example, the memory device may determine that an errorcache includes an entry for the address (e.g., a previous procedureresult indicated that a memory cell in the address stored an erroneousdata state and the error cache was updated with the location of thememory cell). At 420, the memory device may remove the indication fromthe cache based on failing to detect errors in the data (e.g., based ona count of error-free reads for a memory cell or an address satisfying athreshold). For example, an indication of a defective memory cell mayhave been stored based on a previous error checking procedure but due toa time-variant error (e.g., a single occurrence of an error in anon-defective memory cell). Removing the indication from the cache if noerrors are detected may free up the cache to store informationassociated with other defective memory cells, may improve cacheutilization and search speeds, and reduce the chance of incorrectlyinverting a bit for a functional memory cell, among other advantages.

In some examples, the memory device may identify a correctable quantityof errors and may correct the raw data accordingly. For example, anerror correction engine may identify a single error in a SEC or SECDEDscheme and may correct the single error (e.g., flip a bit from a firstlogic state to a correct second logic state) before outputting thecorrected data at 425, for example, to a host device requesting thedata.

In some examples, the memory device may detect one or more errors in thedata using the parity bits but may be unable to correct the errors usingthe parity bits. For example, the memory device may compare a quantityof detected errors in the data to a threshold and determine whether thethreshold is satisfied. If the threshold is satisfied, the memory devicemay detect the errors but may be unable to correct the detected errorsusing the parity bits (e.g., the memory device may detect two errors ina SECDED error correction scheme, but may be unable to correct the twoerrors).

At 430, the memory device may determine whether the error cache includesan entry for the address indicated by the command, which may enable thememory device to correct the data using information in the error cache,among other advantages. For example, the memory device may search theerror cache using the address to identify whether the error cacheincludes an indication of one or more defective memory cells within theset of memory cells from which the data was read. The entry may includean indication of the address, an indication of a location of one or moredefective memory cells within the associated set of memory cells (e.g.,an offset parameter indicating a position of a defective memory cellwithin the address or a corresponding physical address), an error countfor the defective memory cell, metadata associated with the memory cell,or any combination thereof.

If the cache includes an entry for the address, at 440 the memory devicemay invert or otherwise alter one or more bits of the data. For example,the memory device may identify a location of a defective memory cell ofthe set of memory cells using the information in the error cache. Thememory device may “flip” the bit associated with the defective memorycell (e.g., alter the data such that the bit read from the indicatedmemory cell has a different logic value than the logic value read fromthe memory cell).

At 445, the memory device may correct the altered data. For example, thememory device may input the altered data to the error correction engineand perform a second error checking procedure using the altered data andthe parity bits. By flipping the one or more bits (e.g., a single bitinverted based on an indication of an associated memory cell) the memorydevice may reduce the quantity of errors such that the memory device cancorrect the altered data based on the parity bits (e.g., two detectableerrors may be reduced to one correctable error by inverting a bit in aSECDED scheme, among other examples of quantities and schemes). Aftercorrecting the data, or obtaining a result of the second procedureindicating that the altered data does not include errors, the memorydevice may output the data at 425.

In some other examples, the memory device may determine at 430 that thecache fails to include an entry for the address despite detecting anerror at 415. In such examples, the memory device may proceed to 435. At435, the memory device may update the error cache to add or update anentry for the associated address and indication of the memory cell thatincluded the error. By dynamically updating the cache based on detectingerrors, the memory device may track memory cells that are defective,which may enhance the robustness of error correction procedures (e.g.,the error cache may enable the memory device to convert a detectablequantity of errors to a correctable quantity of errors, among otherexamples).

FIG. 5 shows a block diagram 500 of a memory device 505 that supportserror caching techniques for improved error correction in a memorydevice in accordance with examples as disclosed herein. The memorydevice 505 may be an example of aspects of a memory device as describedwith reference to FIGS. 1-4 . The memory device 505 may include acommand receiver 510, a read component 515, a cache component 520, anerror checking component 525, an output component 530, and a diagnosticcomponent 535. Each of these modules may communicate, directly orindirectly, with one another (e.g., via one or more buses).

The command receiver 510 may receive a command to read data from amemory array, the command indicating an address associated with a set ofmemory cells within the memory array. The read component 515 may read,in response to the command, the data from the set of memory cells. Thecache component 520 may determine, based on the indicated address,whether a cache includes an indication that a memory cell of the set ofmemory cells is defective. The error checking component 525 may perform,for the data, a procedure for error correction that is based on whetherthe cache includes the indication.

In some examples, the cache component 520 may determine that the cacheincludes the indication. In such examples, to perform the procedure forerror correction, the error checking component 525 may determine thatthe data includes one or more errors based on the data and parityinformation associated with the data, invert, based on the indicationthat the memory cell is defective and determining that the data includesthe one or more errors, a bit associated with the memory cell to obtainaltered data, and determine, after inverting the bit, whether thealtered data includes a second set of one or more errors based on thealtered data and the parity information.

In some cases, the error checking component 525 may correct, afterinverting the bit, the second set of one or more errors based on thealtered data and the parity information to obtain corrected data.

The output component 530 may output, by a memory device that includesthe memory array, the corrected data in response to the command.

In some examples, the error checking component 525 may determine that aquantity of errors included in the one or more errors satisfies athreshold, where inverting the bit is based on determining that thequantity of errors satisfies the threshold.

In some examples, the error checking component 525 may input the dataand the parity information to error checking logic, where determiningthat the data includes one or more errors is based on inputting the dataand the parity information to the error checking logic. In someexamples, the error checking component 525 may input, after invertingthe bit, the altered data and the parity information to the errorchecking logic, where determining whether the altered data includes asecond set of one or more errors is based on inputting the altered dataand the parity information to the error checking logic.

In some examples, the error checking component 525 may determine, basedat least in part on the procedure for error correction, that the dataincludes an error. The cache component 520 may identify, among the setof memory cells, a respective memory cell associated with the error. Thecache component 520 may write, to the cache, the indication that therespective memory cell is defective based at least in part ondetermining that the data includes the error.

In some examples, the diagnostic component 535 may perform, prior toreceiving the command, a diagnostic procedure for the memory array. Insome examples, the cache component 520 may write, to the cache, theindication that the memory cell is defective based on the diagnosticprocedure.

In some examples, the cache component 520 may determine that the cacheincludes the indication that the memory cell is defective, and the errorchecking component 525 may determine, based on the procedure for errorcorrection, that no error is detected for the data. In some examples,the cache component 520 may remove the indication from the cache basedon determining that no error is detected for the data.

The command receiver 510 may receive a command to read data from amemory array, the command indicating an address associated with a set ofmemory cells within the memory array. The read component 515 may read,in response to the command, the data from the set of memory cells. Insome examples, the error checking component 525 may determine, based onreading the data from the set of memory cells, that the data includes anerror. In some examples, the error checking component 525 may identify,among the set of memory cells, a memory cell associated with the error.The cache component 520 may write, to a cache, an indication that thememory cell is defective based on determining that the data includes theerror.

The cache component 520 may increment an error count associated with thememory cell based on identifying the memory cell as associated with theerror, where writing the indication to the cache is based on theincremented error count satisfying a threshold.

In some examples, the command receiver 510 may receive a second commandto read second data from the set of memory cells. In some examples, thecache component 520 may determine, in response to the second command,that the cache includes the indication that the memory cell isdefective. In some examples, the error checking component 525 mayperform, for the second data, a procedure for error correction that isbased on the cache including the indication.

In some examples, to perform the procedure for error correction, theerror checking component 525 may determine that the second data includesone or more errors based at least in part on parity information for thesecond data. The error checking component 525 may invert, based ondetermining that the second data includes the one or more errors, a bitassociated with the memory cell to obtain altered data. The errorchecking component 525 may correct, after the inverting and based atleast in part on the parity information, one or more errors in thealtered data to obtain corrected data.

The output component 530 may output, by a memory device that includesthe memory array, the corrected data in response to the second command.

In some examples, the error checking component 525 may input the seconddata and the parity information to error checking logic, wheredetermining that the second data includes the one or more errors isbased on inputting the second data and the parity information to theerror checking logic. In some examples, the error checking component 525may input, after the inverting, the altered data and the parityinformation to the error checking logic, where correcting the one ormore errors in the altered data is based at least in part on inputtingthe altered data and the parity information to the error checking logic.

In some examples, the error checking component 525 may determine, basedon the procedure for error correction, that no error is detected for thesecond data. In some examples, the cache component 520 may remove theindication from the cache based on determining that no error is detectedfor the data.

In some cases, the cache includes a second memory array, a portion ofthe memory array, or a combination thereof.

In some cases, where the cache includes an entry for the indicatedaddress, the entry may include the indication that the memory cell isdefective, and the entry may include an address for the memory cell, anoffset for the indicated address associated with the memory cell, anerror count for the memory cell, metadata associated with the memorycell, or any combination thereof.

FIG. 6 shows a flowchart illustrating a method or methods 600 thatsupports error caching techniques for improved error correction in amemory device in accordance with aspects of the present disclosure. Theoperations of method 600 may be implemented by a memory device or itscomponents as described with reference to FIGS. 1-5 . For example, theoperations of method 600 may be performed by a memory device asdescribed with reference to FIG. 5 . In some examples, a memory devicemay execute a set of instructions to control the functional elements ofthe memory device to perform the described functions. Additionally oralternatively, a memory device may perform aspects of the describedfunctions using special-purpose hardware.

At 605, the memory device may receive a command to read data from amemory array, the command indicating an address associated with a set ofmemory cells within the memory array. The operations of 605 may beperformed according to the methods described herein. In some examples,aspects of the operations of 605 may be performed by a command receiveras described with reference to FIG. 5 .

At 610, the memory device may read, in response to the command, the datafrom the set of memory cells. The operations of 610 may be performedaccording to the methods described herein. In some examples, aspects ofthe operations of 610 may be performed by a read component as describedwith reference to FIG. 5 .

At 615, the memory device may determine, based on the indicated address,whether a cache includes an indication that a memory cell of the set ofmemory cells is defective. The operations of 615 may be performedaccording to the methods described herein. In some examples, aspects ofthe operations of 615 may be performed by a cache component as describedwith reference to FIG. 5 .

At 620, the memory device may perform, for the data, a procedure forerror correction that is based on whether the cache includes theindication. The operations of 620 may be performed according to themethods described herein. In some examples, aspects of the operations of620 may be performed by an error checking component as described withreference to FIG. 5 .

In some examples, an apparatus as described with reference to FIGS. 1-5may perform a method or methods, such as the method 600. The apparatusmay include features, means, or instructions (e.g., a non-transitorycomputer-readable medium storing instructions executable by a processor)for receiving a command to read data from a memory array, the commandindicating an address associated with a set of memory cells within thememory array, reading, in response to the command, the data from the setof memory cells, determining, based on the indicated address, whether acache includes an indication that a memory cell of the set of memorycells is defective, and performing, for the data, a procedure for errorcorrection that is based on whether the cache includes the indication.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions fordetermining that the cache includes the indication, where performing theprocedure for error correction includes determining that the dataincludes one or more errors based on the data and parity informationassociated with the data, inverting, based on the indication that thememory cell is defective and determining that the data includes the oneor more errors, a bit associated with the memory cell to obtain altereddata, and determining, after inverting the bit, whether the altered dataincludes a second set of one or more errors based at least in part onthe altered data and the parity information.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forcorrecting, after inverting the bit, the second set of one or moreerrors based on the altered data and the parity information to obtaincorrected data.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions foroutputting, by a memory device that includes the memory array, thecorrected data in response to the command.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions fordetermining that a quantity of errors included in the one or more errorssatisfies a threshold, where inverting the bit may be based ondetermining that the quantity of errors satisfies the threshold.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forinputting the data and the parity information to error checking logic,where determining that the data includes one or more errors may be basedon inputting the data and the parity information to the error checkinglogic, and inputting, after inverting the bit, the altered data and theparity information to the error checking logic, where determiningwhether the altered data includes a second set of one or more errors maybe based on inputting the altered data and the parity information to theerror checking logic.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions fordetermining, based on the procedure for error correction, that the dataincludes an error, identifying, among the set of memory cells, arespective memory cell associated with the error, and writing, to thecache, the indication that the respective memory cell may be defectivebased on determining that the data includes the error.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions forperforming, prior to receiving the command, a diagnostic procedure forthe memory array, and writing, to the cache, the indication that thememory cell may be defective based on the diagnostic procedure.

Some examples of the method 600 and the apparatus described herein mayfurther include operations, features, means, or instructions fordetermining that the cache includes the indication that the memory cellmay be defective, determining, based on the procedure for errorcorrection, that no error is detected for the data, and removing theindication from the cache based on determining that no error is detectedfor the data.

In some examples of the method 600 and the apparatus described herein,the cache includes a second memory array, a portion of the memory array,or a combination thereof.

In some examples of the method 600 and the apparatus described herein,the cache includes an entry for the indicated address, the entryincluding the indication that the memory cell may be defective, andwhere the entry includes an address for the memory cell, an offset forthe indicated address associated with the memory cell, an error countfor the memory cell, metadata associated with the memory cell, or anycombination thereof.

FIG. 7 shows a flowchart illustrating a method or methods 700 thatsupports error caching techniques for improved error correction in amemory device in accordance with aspects of the present disclosure. Theoperations of method 700 may be implemented by a memory device or itscomponents as described herein. For example, the operations of method700 may be performed by a memory device as described with reference toFIG. 5 . In some examples, a memory device may execute a set ofinstructions to control the functional elements of the memory device toperform the described functions. Additionally or alternatively, a memorydevice may perform aspects of the described functions usingspecial-purpose hardware.

At 705, the memory device may receive a command to read data from amemory array, the command indicating an address associated with a set ofmemory cells within the memory array. The operations of 705 may beperformed according to the methods described herein. In some examples,aspects of the operations of 705 may be performed by a command receiveras described with reference to FIG. 5 .

At 710, the memory device may read, in response to the command, the datafrom the set of memory cells. The operations of 710 may be performedaccording to the methods described herein. In some examples, aspects ofthe operations of 710 may be performed by a read component as describedwith reference to FIG. 5 .

At 715, the memory device may determine, based on reading the data fromthe set of memory cells, that the data includes an error. The operationsof 715 may be performed according to the methods described herein. Insome examples, aspects of the operations of 715 may be performed by anerror checking component as described with reference to FIG. 5 .

At 720, the memory device may identify, among the set of memory cells, amemory cell associated with the error. The operations of 720 may beperformed according to the methods described herein. In some examples,aspects of the operations of 720 may be performed by an error checkingcomponent as described with reference to FIG. 5 .

At 725, the memory device may write, to a cache, an indication that thememory cell is defective based on determining that the data includes theerror. The operations of 725 may be performed according to the methodsdescribed herein. In some examples, aspects of the operations of 725 maybe performed by a cache component as described with reference to FIG. 5.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 700. The apparatus may include features,means, or instructions (e.g., a non-transitory computer-readable mediumstoring instructions executable by a processor) for receiving a commandto read data from a memory array, the command indicating an addressassociated with a set of memory cells within the memory array, reading,in response to the command, the data from the set of memory cells,determining, based on reading the data from the set of memory cells,that the data includes an error, identifying, among the set of memorycells, a memory cell associated with the error, and writing, to a cache,an indication that the memory cell is defective based on determiningthat the data includes the error.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions forincrementing an error count associated with the memory cell based onidentifying the memory cell as associated with the error, where writingthe indication to the cache may be based on the incremented error countsatisfying a threshold.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions forreceiving a second command to read second data from the set of memorycells, determining, in response to the second command, that the cacheincludes the indication that the memory cell may be defective, andperforming, for the second data, a procedure for error correction thatmay be based on the cache including the indication.

In some examples of the method 700 and the apparatus described herein,performing the procedure for error correction may include operations,features, means, or instructions for determining that the second dataincludes one or more errors based on parity information for the seconddata, inverting, based on determining that the second data includes theone or more errors, a bit associated with the memory cell to obtainaltered data, and correcting, after the inverting and based on theparity information, one or more errors in the altered data to obtaincorrected data.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions foroutputting, by a memory device that includes the memory array, thecorrected data in response to the second command.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions forinputting the second data and the parity information to error checkinglogic, where determining that the second data includes the one or moreerrors may be based on inputting the second data and the parityinformation to the error checking logic, and inputting, after theinverting, the altered data and the parity information to the errorchecking logic, where correcting the one or more errors in the altereddata may be based on inputting the altered data and the parityinformation to the error checking logic.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions fordetermining, based on the procedure for error correction, that no erroris detected for the second data, and removing the indication from thecache based on determining that no error is detected for the seconddata.

In some examples of the method 700 and the apparatus described herein,the cache includes a second memory array, a portion of the memory array,or a combination thereof.

In some examples of the method 700 and the apparatus described herein,the cache includes an entry for the indicated address, the entryincluding the indication that the memory cell may be defective, andwhere the entry includes an address for the memory cell, an offset forthe indicated address associated with the memory cell, an error countfor the memory cell, metadata associated with the memory cell, or anycombination thereof.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, portions from two or more of the methods may be combined.

An apparatus is described. The apparatus may include a memory array, acache configured to store indications of defective memory cells withinthe memory array, and circuitry configured to cause the apparatus toreceive a command to read data from the memory array, the commandindicating an address associated with a set of memory cells within thememory array, read, in response to the command, the data from the set ofmemory cells, check, based on the indicated address, the cache for anindication that a memory cell of the set of memory cells is defective,and perform, for the data, a procedure for error correction that isbased on whether the cache includes the indication.

Some examples of the apparatus may include error checking logic, whereto perform the procedure for error correction, the circuitry may befurther configured to cause the apparatus to input the data and parityinformation for the data into the error checking logic to determinewhether the data includes one or more errors, invert, based at least inpart on the cache including the indication and determining that the dataincludes one or more errors, a bit associated with the memory cell toobtain altered data, and input the altered data and the parityinformation into the error checking logic to determine whether thealtered data includes a second set of one or more errors.

In some examples, the error checking logic is further configured toinclude correct at least one of the second set of one or more errors.

In some examples, the circuitry is further configured to cause theapparatus to determine that a quantity of errors included in the one ormore errors satisfies a threshold, and invert the bit based at least inpart on determining that the quantity of errors satisfies the threshold.

In some examples, the circuitry is further configured to cause theapparatus to receive, before the command, a prior command to read seconddata from the set of memory cells, determine that the second dataincludes an error associated with the memory cell, and update the cacheto include the indication that the memory cell is defective based atleast in part on determining that the second data includes the error.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The terms “electronic communication,” “conductive contact,” “connected,”and “coupled” may refer to a relationship between components thatsupports the flow of signals between the components. Components areconsidered in electronic communication with (or in conductive contactwith or connected with or coupled with) one another if there is anyconductive path between the components that can, at any time, supportthe flow of signals between the components. At any given time, theconductive path between components that are in electronic communicationwith each other (or in conductive contact with or connected with orcoupled with) may be an open circuit or a closed circuit based on theoperation of the device that includes the connected components. Theconductive path between connected components may be a direct conductivepath between the components or the conductive path between connectedcomponents may be an indirect conductive path that may includeintermediate components, such as switches, transistors, or othercomponents. In some examples, the flow of signals between the connectedcomponents may be interrupted for a time, for example, using one or moreintermediate components such as switches or transistors.

The term “coupling” refers to condition of moving from an open-circuitrelationship between components in which signals are not presentlycapable of being communicated between the components over a conductivepath to a closed-circuit relationship between components in whichsignals are capable of being communicated between components over theconductive path. When a component, such as a controller, couples othercomponents together, the component initiates a change that allowssignals to flow between the other components over a conductive path thatpreviously did not permit signals to flow.

The term “isolated” refers to a relationship between components in whichsignals are not presently capable of flowing between the components.Components are isolated from each other if there is an open circuitbetween them. For example, two components separated by a switch that ispositioned between the components are isolated from each other when theswitch is open. When a controller isolates two components, thecontroller affects a change that prevents signals from flowing betweenthe components using a conductive path that previously permitted signalsto flow.

The devices discussed herein, including a memory array, may be formed ona semiconductor substrate, such as silicon, germanium, silicon-germaniumalloy, gallium arsenide, gallium nitride, etc. In some examples, thesubstrate is a semiconductor wafer. In other examples, the substrate maybe a silicon-on-insulator (SOI) substrate, such as silicon-on-glass(SOG) or silicon-on-sapphire (SOP), or epitaxial layers of semiconductormaterials on another substrate. The conductivity of the substrate, orsub-regions of the substrate, may be controlled through doping usingvarious chemical species including, but not limited to, phosphorous,boron, or arsenic. Doping may be performed during the initial formationor growth of the substrate, by ion-implantation, or by any other dopingmeans.

A switching component or a transistor discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details toproviding an understanding of the described techniques. Thesetechniques, however, may be practiced without these specific details. Insome instances, well-known structures and devices are shown in blockdiagram form to avoid obscuring the concepts of the described examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any processor, controller,microcontroller, or state machine. A processor may also be implementedas a combination of computing devices (e.g., a combination of a DSP anda microprocessor, multiple microprocessors, one or more microprocessorsin conjunction with a DSP core, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be apparent to those skilled in the art, and the generic principlesdefined herein may be applied to other variations without departing fromthe scope of the disclosure. Thus, the disclosure is not limited to theexamples and designs described herein, but is to be accorded thebroadest scope consistent with the principles and novel featuresdisclosed herein.

What is claimed is:
 1. A method, comprising: reading first data from amemory array of a memory system based at least in part on receiving aread command; determining that a quantity of errors associated with thefirst data satisfies a threshold value based at least in part on readingthe first data from the memory array; receiving, from a cache of thememory system, second data based at least in part on determining thatthe quantity of errors associated with the first data satisfies thethreshold value; and correcting, using the second data, the quantity oferrors associated with the first data based at least in part ondetermining that the quantity of errors satisfy the threshold value andreceiving the second data.
 2. The method of claim 1, wherein determiningthat the quantity of errors associated with the first data satisfies thethreshold value comprises: detecting a first error associated with afirst memory cell of the memory array; and detecting a second errorassociated with a second memory cell of the memory array.
 3. The methodof claim 2, further comprising: inverting a first bit associated withthe first memory cell, a second bit associated with the second memorycell, or both based at least in part on detecting the first error andthe second error, wherein correcting the quantity of errors associatedwith the first data is based at least in part on inverting the firstbit, the second bit, or both.
 4. The method of claim 1, furthercomprising: performing a first error control operation on the firstdata, wherein determining that the quantity of errors associated withthe first data satisfies the threshold value is based at least in parton performing the first error control operation; and performing a seconderror control operation on the first data based at least in part onreceiving the second data, wherein correcting the quantity of errorsassociated with the first data is based at least in part on performingthe second error control operation.
 5. The method of claim 4, wherein atleast the first error control operation comprises a single errorcorrection double error detection (SECDED) operation.
 6. The method ofclaim 1, further comprising: reading third data from the memory array ofthe memory system based at least in part on receiving a second readcommand; determining that a quantity of errors associated with the thirddata does not satisfy the threshold value based at least in part onreading the third data from the memory array; and performing a thirderror control operation on the third data based at least in part ondetermining that the quantity of errors associated with the third datadoes not satisfy the threshold value.
 7. The method of claim 1, whereinthe second data comprises error control information.
 8. The method ofclaim 1, further comprising: receiving the read command, wherein readingthe first data is based at least in part on receiving the read command;and detecting the quantity of errors associated with the first databased at least in part on reading the first data from the memory array.9. An apparatus, comprising: a memory array; a cache; and a controllercoupled with the memory array and the cache, wherein the controller isoperable to cause the apparatus to: read first data from the memoryarray based at least in part on receiving a read command; determine thata quantity of errors associated with the first data satisfies athreshold value based at least in part on reading the first data fromthe memory array; receive, from the cache, second data based at least inpart on determining that the quantity of errors associated with thefirst data satisfies the threshold value; and correct, using the seconddata, the quantity of errors associated with the first data based atleast in part on determining that the quantity of errors satisfy thethreshold value and receiving the second data.
 10. The apparatus ofclaim 9, wherein to determine that the quantity of errors associatedwith the first data satisfies the threshold value, the controller isoperable to cause the apparatus to: detect a first error associated witha first memory cell of the memory array; and detect a second errorassociated with a second memory cell of the memory array.
 11. Theapparatus of claim 10, wherein the controller is operable to cause theapparatus to: invert a first bit associated with the first memory cell,a second bit associated with the second memory cell, or both based atleast in part on detecting the first error and the second error, whereincorrecting the quantity of errors associated with the first data isbased at least in part on inverting the first bit, the second bit, orboth.
 12. The apparatus of claim 9, wherein the controller is operableto cause the apparatus to: perform a first error control operation onthe first data, wherein determining that the quantity of errorsassociated with the first data satisfies the threshold value is based atleast in part on performing the first error control operation; andperform a second error control operation on the first data based atleast in part on receiving the second data, wherein correcting thequantity of errors associated with the first data is based at least inpart on performing the second error control operation.
 13. The apparatusof claim 12, wherein at least the first error control operationcomprises a single error correction double error detection (SECDED)operation.
 14. The apparatus of claim 9, wherein the controller isoperable to cause the apparatus to: read third data from the memoryarray of a memory system based at least in part on receiving a secondread command; determine that a quantity of errors associated with thethird data does not satisfy the threshold value based at least in parton reading the third data from the memory array; and perform a thirderror control operation on the third data based at least in part ondetermining that the quantity of errors associated with the third datadoes not satisfy the threshold value.
 15. The apparatus of claim 9,wherein the second data comprises error control information.
 16. Theapparatus of claim 9, wherein the controller is operable to cause theapparatus to: receive the read command, wherein reading the first datais based at least in part on receiving the read command; and detect thequantity of errors associated with the first data based at least in parton reading the first data from the memory array.
 17. A non-transitorycomputer-readable medium storing code comprising instructions, whichwhen executed by a processor of an electronic device, cause theelectronic device to: read first data from a memory array of a memorysystem based at least in part on receiving a read command; determinethat a quantity of errors associated with the first data satisfies athreshold value based at least in part on reading the first data fromthe memory array; receive, from a cache of the memory system, seconddata based at least in part on determining that the quantity of errorsassociated with the first data satisfies the threshold value; andcorrect, using the second data, the quantity of errors associated withthe first data based at least in part on determining that the quantityof errors satisfy the threshold value and receiving the second data. 18.The non-transitory computer-readable medium storing code of claim 17,wherein to determine that the quantity of errors associated with thefirst data satisfies the threshold value the instructions, when executedby the processor of the electronic device, further cause the electronicdevice to: detect a first error associated with a first memory cell ofthe memory array; and detect a second error associated with a secondmemory cell of the memory array.
 19. The non-transitorycomputer-readable medium storing code of claim 18, wherein theinstructions, when executed by the processor of the electronic device,further cause the electronic device to: invert a first bit associatedwith the first memory cell, a second bit associated with the secondmemory cell, or both based at least in part on detecting the first errorand the second error, wherein correcting the quantity of errorsassociated with the first data is based at least in part on invertingthe first bit, the second bit, or both.
 20. The non-transitorycomputer-readable medium storing code of claim 17, wherein theinstructions, when executed by the processor of the electronic device,further cause the electronic device to: perform a first error controloperation on the first data, wherein determining that the quantity oferrors associated with the first data satisfies the threshold value isbased at least in part on performing the first error control operation;and perform a second error control operation on the first data based atleast in part on receiving the second data, wherein correcting thequantity of errors associated with the first data is based at least inpart on performing the second error control operation.